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| Semiconductor MSM6691 Semiconductor DRAM Interface IC MSM6691 GENERAL DESCRIPTION DRAMs can be used for voice storage by connecting the MSM6691 with OKI's integrate R/W (Read/Write) ICs, the MSM6388, and the MSM6588. The MSM6691 translates the signals associated with the dedicated serial register interface of the MSM6388 and MSM6588 driver interface when used in a stand-alone mode. FEATURES * DRAM ( 1-bit configuration) * 1-Mbit DRAM (M 51100A, M511001A) : Four units can be used. * 4-Mbit DRAM (M 514100A, M514101A) : Four units can be used. * Power voltage : 5V single * Built-in refresh circuit (RAS only refresh) * Oscillation frequency : 8MHz (during refresh) * Sampling frequency * 4 kHz to 32 kHz when MSM6388 is connected. * 4 kHz to 16 kHz when MSM6588 is connected. * Package : 44-pin plastic QFP (QFP44-P-910-2K) (Product name : MSM6691GS-2K) MSM6691 Semiconductor BLOCK DIAGRAM TEST TEST GND VDD SAD Sin P OUT 10 Row Address Counter LD 10 Column or Row Address Multiplexer A10 11 Address Multiplexer 11 A0 to A10 CK SAS TAS 10 11 XT OSC XT R Column Address Counter Refresh Counter WE RWCK 4M/1M to CS4 4 Timing and Control XWE DRAM CAS Control CONTROL 4 RAS CAS1 to CAS4 BANK0 D0 D1 LE Q0 Q1 BANK1 BKLE D OUT XDIN Semiconductor MSM6691 PIN CONFIGURATION (TOP VIEW) RWCK DOUT CS3 CS4 A10 VDD WE A9 A8 A7 35 A6 34 33 32 31 30 29 28 27 26 25 24 23 44 43 42 41 40 39 38 37 CS2 CS1 SAD SAS TAS GND TEST BKLE 4M/1M BANK0 BANK1 1 2 3 4 5 6 7 8 9 10 11 36 A5 A4 A3 A2 A1 GND XT XT A0 XDIN XWE 12 13 14 15 16 17 18 19 20 21 CAS4 TEST NC NC NC NC VDD CAS1 CAS2 CAS3 44-Pin Plastic QFP NC: No-connection pin RAS 22 MSM6691 Semiconductor PIN DESCRIPTIONS Symbol VDD GND XT XT TEST TEST SAD SAS TAS RWCK Type I I I O I I I I I I Power GND Oscillator Oscillator IC test. Set to "L". IC test. Set to "H". Initial address of R/W Clock to input serial address data to internal register Load serial data, input to address register, and reset to internal address counter. Clock to read and write data register information. At RWCK fall, internal operation starts. In read mode data input to XDIN is latched and output the DOUT terminal. In write mode, DIN (D I/O) output data MSM6388 (MSM6588) is input to the DIN pin of DRAM. At RWCK the fall internal address counter automatically increments, and address data is output from A0 to A10. WE XWE A0 to A10 RAS CAS1 CAS2 CAS3 CAS4 XDIN DOUT CS1 CS2 CS3 CS4 4M/1M BANK0 BANK1 I I Select 4-M DRAM or 1-M DRAM for connection. "L" 1M DRAM connected; 4-M DRAM connected Chip select data when 4-M DRAM is connedted. Terminal is used to select desired DRAM from DRAMs connected to select terminals. CAS1 to CAS4. Set to "L" when 1-M DRAM is connected. Select Terminal CAS1 CAS2 CAS3 CAS4 BKLE I Bank1 L L H H Bank0 L H L H I O I Write data Read data Chip select when 1-M DRAM is connected. Because input terminal to select most significant address when 4-M DRAM is connected. I O O O O Select R/W modes Control DRAM Address control DRAM Control DRAM Control DRAM Description Latch data, input to BANK0, BANK1, when 4-M DRAM is used. "L" indicates a "through" setting. "H" indicates a "latch" setting. Set to "L" when 1-M DRAM is used. Semiconductor MSM6691 ABSOLUTE MAXIMUM RATINGS Parameter Power Supply Voltage Input Voltage Output Voltage Input Current Output Current Storage Temperature Symbol V DD VI VO II IO T STG -- Ta=25C Standard is GND=0V Condition Rating -0.5 to +7 -0.5 to VDD+0.5 -0.5 to VDD+0.5 -10 to +10 -20 to +20 -65 to +150 Unit V V V mA mA C RECOMMENDED OPERATING CONDITIONS (GND=0V) Parameter Power Supply Voltage Operating Temperature Oscillation Frequency Symbol VDD TOP fOSC Range 4.5 to +5.5 -40 to +85 8 Unit V C MHz ELECTRICAL CHARACTERISTICS DC Characteristics (Ta=-40 to +85C, VDD=5V +10%, GND=0V) - Parameter H Level Input Voltage L Level Input Voltage H Level Input Current L Level Input Current Tri-state Output Leak Current (Including open drain output) H Level Output Voltage L Level Output Voltage Operating Current Consumption Symbol V IH V IL I IH I IL IOZH IOZL V OH V OL I DD Condition -- -- VIH=VDD VIL=GND VOH=VDD VOL=GND IOH=-5.0mA IOL=+5.0mA Output Open VIH=VDD fOSC=8MHz VIL=GND Min. 3.5 -0.3 -- -10 -- -10 2.4 GND -- Typ. -- -- 0.01 -0.01 0.01 -0.01 4.20 0.24 -- Max. V 1.5 10 -- 10 -- V 0.5 3 DD Unit V V mA mA mA V V mA DD+0.3 *1 Standard when VDD=5.0V, Ta=25C MSM6691 Semiconductor APPLICATION CIRCUITS Figure 2 indicates an example of the circuits used when the MSM6388 (M6588) is used with four 1-Mbit DRAMs. Figure 3 indicates an example of the circuits used when MSM6388 (M6588) is used with four 4Mbit DRAMs. VCC VCC CAS CAS CAS CS3 CS4 GND CAS1 CS4 CAS2 TEST CAS3 BANK0 CAS4 BANK1 BKLE 4M/1M GND TEST CS3 CAS GND GND GND MSM511000A MSM511000A VCC MSM511000A VCC DOUT RAS DIN MSM511000A A0 A9 WE A0 10 XWE RAS 8MHZ XDIN XT MSM6691 TAS RWCK WE DOUT SAD SAS CS1 CS2 VDD SAD SAS DI/O for TAS MSM6588 RWCK WE DOUT DIN CS1 Figure 2. Example of Interfacing with Four 1-Mbit DRAMs VDD MSM6388 or MSM6588 CS2 A9 A10 XT OPEN GND ~ ~ Semiconductor 8MHZ VDD XT RAS XWE XDIN DIN A0 11 A0 DOUT WE RAS XT VCC SAS SAS TAS RWCK WE DOUT VDD VCC VCC VCC SAD SAS DI/O for MSM6588 ~ TAS RWCK WE DOUT DIN MSM6691 A10 MSM514100A MSM514100A CS1 CS2 CS3 MSM514100A MSM514100A One of four DRAMs can be selected by BANK0 and BANK1. MSM6388 or MSM6588 CS1 CS2 CS3 CS4 ~ A10 CAS GND CAS GND Figure 3. Example of Interfacing with Four 4-Mbit DRAMs CAS1 CS4 CAS2 TEST CAS3 BANK0 BANK1 CAS4 BKLE GND TEST 4M/1M CAS GND CAS GND GND BANK0 BANK1 MSM6691 |
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